Invention Grant
- Patent Title: Piezoelectric device and method of manufacturing piezoelectric device
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Application No.: US17153809Application Date: 2021-01-20
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Publication No.: US12063864B2Publication Date: 2024-08-13
- Inventor: Takami Arakawa , Takayuki Naono
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: SOLARIS Intellectual Property Group, PLLC
- Priority: JP 18161453 2018.08.30
- Main IPC: H10N30/853
- IPC: H10N30/853 ; H10N30/00 ; H10N30/045

Abstract:
A piezoelectric device and a manufacturing method thereof in which a piezoelectric film formed of a thin film of a lead zirconate titanate-based perovskite oxide is formed on a substrate, and at least a first region out of the first region and a second region of the piezoelectric film is irradiated with electromagnetic waves having a wavelength of 230 nm or less in a reducing atmosphere to provide a difference in piezoelectric characteristics between the first region and the second region so that the first region has a smaller absolute value of a piezoelectric constant d31 and a smaller dielectric loss tan δ than the second region.
Public/Granted literature
- US20210143316A1 PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC DEVICE Public/Granted day:2021-05-13
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