Invention Grant
- Patent Title: Compute in memory system
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Application No.: US17734701Application Date: 2022-05-02
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Publication No.: US12073869B2Publication Date: 2024-08-27
- Inventor: Mahmut Sinangil
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/408 ; G11C11/4094 ; H03M1/80

Abstract:
A computing device in some examples includes an array of memory cells, such as 8-transisor SRAM cells, in which the read bit-lines are isolated from the nodes storing the memory states such that simultaneous read activation of memory cells sharing a respective read bit-line would not upset the memory state of any of the memory cells. The computing device also includes an output interface having capacitors connected to respective read bit-lines and have capacitance that differ, such as by factors of powers of 2, from each other. The output interface is configured to charge or discharge the capacitors from the respective read bit-lines and to permit the capacitors to share charge with each other to generate an analog output signal, in which the signal from each read bit-line is weighted by the capacitance of the capacitor connected to the read bit-line. The computing device can be used to compute, for example, sum of input weighted by multi-bit weights.
Public/Granted literature
- US20220262424A1 COMPUTE IN MEMORY SYSTEM Public/Granted day:2022-08-18
Information query
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