In a method for accessing memory cells, a first read operation is performed on a first memory cell to read a first data value from the first memory cell. During the first read operation, a first variable current source provides a first assessment current having a first current level to a first bitline coupled to the first memory cell. A second read operation is performed on the first memory cell to read a second data value from the first memory cell. During the second read operation, the first variable current source manipulates the first current level to provide a second current level to the first bitline. A difference between the first current level and the second current level is based on whether the first data value that was read during the first read operation was a first data state or a second data state.