Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US18306463Application Date: 2023-04-25
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Publication No.: US12074023B2Publication Date: 2024-08-27
- Inventor: Ji-woon Park , Jin-su Lee , Hyung-suk Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20180118139 2018.10.04
- The original application number of the division: US17224365 2021.04.07
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/04 ; H01L21/285 ; H01L21/768 ; H01L49/02
Abstract:
A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.
Public/Granted literature
- US20230260783A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2023-08-17
Information query
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