Invention Grant
- Patent Title: Method for manufacturing semiconductor structure
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Application No.: US17373914Application Date: 2021-07-13
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Publication No.: US12074062B2Publication Date: 2024-08-27
- Inventor: Taoyan Yan
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2010128019.X 2020.02.28
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285
Abstract:
Some examples of this disclosure relate to the field of the semiconductor technology, and disclose a method for manufacturing a semiconductor structure. The method for manufacturing of the semiconductor structure includes: providing a base, wherein the base includes a metal layer and an oxide located in the metal layer or on a surface of the metal layer; and performing heat treatment on the base, wherein a reducing gas is introduced during the heat treatment, and the metal layer is converted into a metal compound layer after the heat treatment. This disclosure can improve the performance of the semiconductor structure.
Public/Granted literature
- US20210343534A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2021-11-04
Information query
IPC分类:
