Invention Grant
- Patent Title: Semiconductor device production method
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Application No.: US16960831Application Date: 2018-03-29
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Publication No.: US12074065B2Publication Date: 2024-08-27
- Inventor: Tatsuro Yoshino , Masato Suzuki , Masato Negishi , Kenji Yoshikawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2018/013224 2018.03.29
- International Announcement: WO2019/186888A 2019.10.03
- Date entered country: 2020-07-08
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L33/00 ; H01S5/02 ; H01S5/042

Abstract:
A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.
Information query
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