Invention Grant
- Patent Title: Thermal interface material layer and use thereof
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Application No.: US17767187Application Date: 2020-10-12
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Publication No.: US12074087B2Publication Date: 2024-08-27
- Inventor: Fay Hua
- Applicant: NINGBO S J ELECTRONICS CO., LTD.
- Applicant Address: CN Zhejiang
- Assignee: Ningbo S J Electronics Co., Ltd.
- Current Assignee: Ningbo S J Electronics Co., Ltd.
- Current Assignee Address: CN
- Agency: Scale LLP
- Priority: CN 1910964580.9 2019.10.11
- International Application: PCT/CN2020/120417 2020.10.12
- International Announcement: WO2021/068966A 2021.04.15
- Date entered country: 2022-04-07
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/00 ; H01L23/433

Abstract:
The present invention relates to a thermal interface material layer and use thereof. The thermal interface material layer comprises an indium layer and a heat dissipation cover located on one side of the indium layer; the surface of the heat dissipation cover contains a nickel layer, and the nickel layer is connected to the indium layer. In the thermal interface material layer of the present invention, the nickel layer on the surface of the heat dissipation cover is connected to the indium layer, so as to form a Ni—In compound layer having high structure stability, thereby solving the problem that the AuIn2 compound layer formed by welding the indium layer and Au used as a wetting layer in the traditional thermal interface layer is easily fractured, improving the reliability of the assembly obtained by assembling same.
Public/Granted literature
- US20220367317A1 THERMAL INTERFACE MATERIAL LAYER AND USE THEREOF Public/Granted day:2022-11-17
Information query
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