Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
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Application No.: US17669773Application Date: 2022-02-11
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Publication No.: US12074142B2Publication Date: 2024-08-27
- Inventor: Jongpa Hong , Hwail Jin , Sang-Sick Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR 20210078746 2021.06.17
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L25/00 ; H01L25/065

Abstract:
Disclosed are semiconductor packages and their fabricating methods. The semiconductor package comprises connection terminals between a first die and a second die. The first die has signal and peripheral regions and includes first vias on the peripheral region. The second die is on the first die and has second vias on positions that correspond to the first vias. The connection terminals connect the second vias to the first vias. The peripheral region includes first regions adjacent to corners of the first die and second regions adjacent to lateral surfaces of the first die. The connection terminals include first connection terminals on the first regions and second connection terminals on the second regions. A sum of areas of the first connection terminals per unit area on the first regions is greater than that of areas of the second connection terminals per unit area on the second regions.
Public/Granted literature
- US20220406755A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-12-22
Information query
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