Invention Grant
- Patent Title: Memory array circuit and method of manufacturing same
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Application No.: US17213074Application Date: 2021-03-25
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Publication No.: US12074156B2Publication Date: 2024-08-27
- Inventor: Hidehiro Fujiwara , Sahil Preet Singh , Chih-Yu Lin , Hsien-Yu Pan , Yen-Huei Chen , Hung-Jen Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US15904959 2018.02.26
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G11C5/06 ; G11C7/18 ; H01L23/522 ; H10B10/00

Abstract:
A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along a first direction in a first column of memory cells. The bit line includes a first conductor extending in the first direction and being in a first conductive layer, and a second conductor extending in the first direction and being in a second conductive layer different from the first conductive layer.
Public/Granted literature
- US20210217742A1 MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING SAME Public/Granted day:2021-07-15
Information query
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