Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US18136216Application Date: 2023-04-18
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Publication No.: US12074168B2Publication Date: 2024-08-27
- Inventor: Guo-Huei Wu , Jerry Chang Jui Kao , Chih-Liang Chen , Hui-Zhong Zhuang , Jung-Chan Yang , Lee-Chung Lu , Xiangdong Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L23/528
Abstract:
A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.
Public/Granted literature
- US20230253406A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-08-10
Information query
IPC分类:
