Invention Grant
- Patent Title: Sensor-less overcurrent fault detection using high electron mobility transistors
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Application No.: US17468831Application Date: 2021-09-08
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Publication No.: US12074209B2Publication Date: 2024-08-27
- Inventor: Xiaoqing Song , Utkarsh Raheja , Pietro Cairoli , Jing Xu
- Applicant: ABB Schweiz AG
- Applicant Address: CH Baden
- Assignee: ABB SCHWEIZ AG
- Current Assignee: ABB SCHWEIZ AG
- Current Assignee Address: CH Baden
- Agency: McCarter & English, LLP
- Main IPC: H02M1/32
- IPC: H02M1/32 ; H01L29/20 ; H01L29/66 ; H01L29/778 ; H02H3/08 ; H03K17/0812

Abstract:
An overcurrent fault detector using a High Electron Mobility Transistor (HEMT) operated by a gate driver is disclosed. The overcurrent fault detector includes a band-pass filter and a control circuit. The band-pass filter is configured to receive gate-to-source voltage (VGS) signals of the HEMT and filter the VGS signals to generate a band-limited version of the VGS signals. The control circuit is configured to measure a value of the band-limited version of the VGS signals, determine if the value is greater than a threshold value, and generate a fault signal that disables the gate driver and terminates an overcurrent fault condition in response to determining that the value is greater than the threshold value.
Public/Granted literature
- US20230074777A1 SENSOR-LESS OVERCURRENT FAULT DETECTION USING HIGH ELECTRON MOBILITY TRANSISTORS Public/Granted day:2023-03-09
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