Invention Grant
- Patent Title: Direct semiconductor solar devices
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Application No.: US17763980Application Date: 2020-07-13
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Publication No.: US12074241B2Publication Date: 2024-08-27
- Inventor: Ian Ferguson , Corey E. Lerner , Chuanle Zhou
- Applicant: Columbus Photovoltaics LLC
- Applicant Address: US NY Rego Park
- Assignee: Columbus Photovoltaics LLC
- Current Assignee: Columbus Photovoltaics LLC
- Current Assignee Address: US NY Rego Park
- Agency: Lerner David LLP
- International Application: PCT/US2020/041755 2020.07.13
- International Announcement: WO2021/066920A 2021.04.08
- Date entered country: 2022-03-25
- Main IPC: H01L31/07
- IPC: H01L31/07 ; H01L31/02 ; H01L31/0224 ; H01L31/0304 ; H01L31/078

Abstract:
A photovoltaic cell includes a semiconductor element (20) formed from a direct semiconductor and a transparent biasing agent (28) overlying a first portion of the front face (22) of the semiconductor, the biasing agent producing a first depletion region (30) in the semiconductor element. A collector (40) directly contacts a second portion of the front face. The collector produces a second depletion region (44) in the semiconductor element. The collector (40) is out of direct conductive contact with the biasing agent (28) but in proximity to the biasing agent. A continuous region at least partially depleted of majority carriers extends between the first and second depletion regions at the front face of the semiconductor element. The continuous region may include overlapping portions of the first and second depletion regions (30,44), or may include an additional depletion region (160) formed by a charged dielectric (147).
Public/Granted literature
- US20220376127A1 Improvements in Direct Semiconductor Solar Devices Public/Granted day:2022-11-24
Information query
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