Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17939790Application Date: 2022-09-07
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Publication No.: US12074589B2Publication Date: 2024-08-27
- Inventor: Junichi Chisaka
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Maier & Maier, PLLC
- Priority: JP 22039224 2022.03.14
- Main IPC: H03K17/06
- IPC: H03K17/06 ; H03K17/081

Abstract:
According to one embodiment, a semiconductor device includes a first transistor, a first circuit, a second circuit, and a third circuit. The first transistor has one end connected to a power supply voltage terminal, the other end connected to a first node, and a gate connected to a first output terminal. The first circuit is configured to control a voltage of the first node based on a voltage of a ground voltage terminal. The second circuit is configured to control a voltage of the first output terminal based on the voltage of the ground voltage terminal and a voltage of an input terminal. The third circuit is configured to control switching between connection and disconnection between the ground voltage terminal and the first circuit.
Public/Granted literature
- US20230291396A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-09-14
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