Invention Grant
- Patent Title: Metal joint, metal joint production method, semiconductor device, and wave guide path
-
Application No.: US17264873Application Date: 2018-09-25
-
Publication No.: US12076967B2Publication Date: 2024-09-03
- Inventor: Takashi Ijima , Koji Yamazaki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2018/035292 2018.09.25
- International Announcement: WO2020/065700A 2020.04.02
- Date entered country: 2021-02-01
- Main IPC: B32B37/06
- IPC: B32B37/06 ; B23K103/12 ; H01L23/00

Abstract:
Provided is a metal joint (5) including: a Ag—Cu—Zn layer (7); and Cu—Zn layers (6) joined to both surfaces of the Ag—Cu—Zn layer (7), wherein the Ag—Cu—Zn layer (7) has a composition in which a Cu component is 1 atm % or more and 10 atm % or less, a Zn component is 1 atm % or more and 40 atm % or less, and the balance is a Ag component with respect to the total 100 atm %, and wherein the Cu—Zn layers (6) have a composition in which a Zn component is 10 atm % or more and 40 atm % or less and the balance is a Cu component with respect to the total 100 atm %. It is therefore possible to obtain the metal joint (5), which is capable of joining metal base materials to each other without being limited to aluminum-based materials, and also have high mechanical strength.
Public/Granted literature
- US20210305194A1 METAL JOINT, METAL JOINT PRODUCTION METHOD, SEMICONDUCTOR DEVICE, AND WAVE GUIDE PATH Public/Granted day:2021-09-30
Information query