An optical apparatus comprising an integrated germanium photodetector associated with a silicon nitride launch waveguide, the integrated germanium photodetector comprising a silicon layer, a germanium layer disposed atop the silicon layer, a plurality of conductive vias, at least one conductive via of the plurality of conductive vias being disposed atop the germanium layer, and a plurality of metal contacts each interconnected to each of the plurality of conductive vias; wherein the silicon nitride launch waveguide extends over a length of the silicon layer, and such that to create a coupling region between the silicon nitride launch waveguide and the germanium layer; and wherein, when an optical signal is launched into the silicon nitride launch waveguide, the optical signal is caused to be coupled into the integrated germanium photodetector at the coupling region, such that to be absorbed by the germanium layer.