Invention Grant
- Patent Title: Electronic device
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Application No.: US18374028Application Date: 2023-09-28
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Publication No.: US12079023B2Publication Date: 2024-09-03
- Inventor: Jeongpyo Park , Tae-Hwang Kong , Junhyeok Yang , Jooseong Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR 20200163920 2020.11.30
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F1/46

Abstract:
An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.
Public/Granted literature
- US20240019886A1 ELECTRONIC DEVICE Public/Granted day:2024-01-18
Information query
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