Invention Grant
- Patent Title: Memory system including memory device and memory controller, and operating method thereof
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Application No.: US18150626Application Date: 2023-01-05
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Publication No.: US12079491B2Publication Date: 2024-09-03
- Inventor: Taewoo Han , Wooil Kim , Taehun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,Dongguk University Industry-Academic Cooperation Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Dongguk University Industry-Academic Cooperation Foundation
- Current Assignee Address: KR Gyeonggi-do; KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20220021994 2022.02.21 KR 20220068915 2022.06.07
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory system includes a memory device including a memory cell array divided into a plurality of memory banks, and a memory controller that sends read requests or write requests to the memory device for the purpose of inputting data to or outputting data from the memory banks of the memory cell array, respectively, and sends the read requests so as to be separated from the write requests based on a read-write switching point. In a first turn, the memory controller sets a near switching point before the read-write switching point. The memory controller blocks scheduling at least one of first bank requests, between the near switching point and the read-write switching point. The memory controller schedules at least one of second bank requests, which cause state switching of the memory banks, so as to be issued between the near switching point and the read-write switching point.
Public/Granted literature
- US20230266893A1 MEMORY SYSTEM INCLUDING MEMORY DEVICE AND MEMORY CONTROLLER, AND OPERATING METHOD THEREOF Public/Granted day:2023-08-24
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