Invention Grant
- Patent Title: IC device layout method
-
Application No.: US18362889Application Date: 2023-07-31
-
Publication No.: US12079559B2Publication Date: 2024-09-03
- Inventor: Shih-Wei Peng , Guo-Huei Wu , Wei-Cheng Lin , Hui-Zhong Zhuang , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US17395148 2021.08.05
- Main IPC: G06F30/392
- IPC: G06F30/392 ; G03F1/36 ; G03F7/00 ; G06F30/398

Abstract:
A method of generating an IC layout diagram includes overlapping a channel region of an upper transistor of a complementary field-effect transistor (CFET) in an IC layout with a gate region of the CFET, thereby defining a channel overlap region, positioning an isolation region in the IC layout, the isolation region including an entirety of the channel overlap region, intersecting the isolation region with a conductive region, and generating an IC layout diagram based on the IC layout.
Public/Granted literature
- US20230376668A1 IC DEVICE LAYOUT METHOD Public/Granted day:2023-11-23
Information query