Invention Grant
- Patent Title: Memory device including dual control circuits
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Application No.: US17141124Application Date: 2021-01-04
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Publication No.: US12080341B2Publication Date: 2024-09-03
- Inventor: Hidehiro Fujiwara , Yen-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16513494 2019.07.16
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C11/412 ; H10B10/00

Abstract:
A memory device is provided. The memory device comprises a memory cell array, a first control circuit, and a second control circuit. The memory cell array has a plurality of memory cells, wherein each of the plurality of memory cells comprises a first port and a second port. The first control circuit is disposed on a first side of the memory cell array and is arranged to electrically connect to the plurality of first ports. The second control circuit is disposed on the first side of the memory cell array and is arranged to electrically connect to the plurality of second ports. The plurality of first ports are different from the plurality of second ports.
Public/Granted literature
- US20210125665A1 MEMORY DEVICE AND METHOD OF CONTROLLING MEMORY DEVICE Public/Granted day:2021-04-29
Information query
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