Invention Grant
- Patent Title: Content addressable memory device having electrically floating body transistor
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Application No.: US18367117Application Date: 2023-09-12
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Publication No.: US12080349B2Publication Date: 2024-09-03
- Inventor: Benjamin S. Louie , Jin-Woo Han , Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C15/04
- IPC: G11C15/04 ; H10B12/00 ; G11C11/404 ; G11C16/04
Abstract:
A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data.
Public/Granted literature
- US20230420048A1 Content Addressable Memory Device Having Electrically Floating Body Transistor Public/Granted day:2023-12-28
Information query
