Invention Grant
- Patent Title: Chip capacitor including capacitor wires
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Application No.: US17990120Application Date: 2022-11-18
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Publication No.: US12080479B2Publication Date: 2024-09-03
- Inventor: Soojae Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20220038397 2022.03.28
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/224

Abstract:
A chip capacitor includes a substrate, a plurality of capacitor wires on the substrate, and a mold layer disposed on the substrate to cover the capacitor wires. Each of the capacitor wires includes a core electrode line having a wire shape, an outer electrode line covering at least a portion of the core electrode line, and a dielectric line interposed between the core electrode line and the outer electrode line.
Public/Granted literature
- US20230307180A1 CHIP CAPACITOR INCLUDING CAPACITOR WIRES Public/Granted day:2023-09-28
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