Invention Grant
- Patent Title: High density plasma enhanced process chamber
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Application No.: US17456236Application Date: 2021-11-23
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Publication No.: US12080516B2Publication Date: 2024-09-03
- Inventor: Zheng John Ye , Jianhua Zhou , Shouqian Shao , Suhail Anwar
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C23C16/34
- IPC: C23C16/34 ; C23C16/30 ; C23C16/40 ; C23C16/505 ; H01J37/32

Abstract:
The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.
Public/Granted literature
- US20230162947A1 HIGH DENSITY PLASMA ENHANCED PROCESS CHAMBER Public/Granted day:2023-05-25
Information query
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