Semiconductor device having interconnection structure and method of manufacturing the same

Invention Grant

US12080591B2 Semiconductor device having interconnection structure and method of manufacturing the same 有权

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Patent Title: Semiconductor device having interconnection structure and method of manufacturing the same
Application No.: US17887045

Application Date: 2022-08-12
Publication No.: US12080591B2

Publication Date: 2024-09-03
Inventor: Kazuyuki Omori , Seiji Muranaka , Kazuyoshi Maekawa
Applicant: Renesas Electronics Corporation
Applicant Address: JP Tokyo
Assignee: RENESAS ELECTRONICS CORPORATION
Current Assignee: RENESAS ELECTRONICS CORPORATION
Current Assignee Address: JP Tokyo
Agency: Rimon P.C.
Priority: JP 14016841 2014.01.31
The original application number of the division: US14592998 2015.01.09
Main IPC: H01L21/4763
IPC: H01L21/4763 ; C23C14/06 ; C23C14/16 ; C23C14/34 ; H01L21/285 ; H01L21/768 ; H01L23/528 ; H01L23/532

Semiconductor device having interconnection structure and method of manufacturing the same

Abstract:

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

Public/Granted literature

US20220384257A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-12-01

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）