Invention Grant
- Patent Title: Semiconductor device having an insulating sheet and a conductive film, and method of manufacturing the same
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Application No.: US17894645Application Date: 2022-08-24
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Publication No.: US12080612B2Publication Date: 2024-09-03
- Inventor: Katsumi Taniguchi , Yoshinari Ikeda , Ryoichi Kato , Yuma Murata , Akito Nakagome
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP 21171322 2021.10.20
- Main IPC: H01L23/047
- IPC: H01L23/047 ; H01L21/48 ; H01L23/373 ; H01L25/07

Abstract:
A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.
Public/Granted literature
- US20230119240A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-04-20
Information query
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