Invention Grant
- Patent Title: Semiconductor device with conductive layers having different pattern densities and method for fabricating the same
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Application No.: US17469010Application Date: 2021-09-08
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Publication No.: US12080642B2Publication Date: 2024-09-03
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: MUNCY, GEISSLER, OLDS & LOWE, PC
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/033 ; H01L21/311 ; H01L21/3213

Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including a dense pattern area and a loose pattern area positioned adjacent to the dense pattern area; a plurality of dense conductive layers positioned on the dense pattern area of the substrate; and a plurality of loose conductive layers positioned on the loose pattern area of the substrate. A distance between an adjacent pair of the plurality of dense conductive layers is less than a distance between an adjacent pair of the plurality of loose conductive layers.
Public/Granted literature
Information query
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