Invention Grant
- Patent Title: Integrated circuit, system and method of forming the same
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Application No.: US18065963Application Date: 2022-12-14
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Publication No.: US12080647B2Publication Date: 2024-09-03
- Inventor: Guo-Huei Wu , Pochun Wang , Wei-Hsin Tsai , Chih-Liang Chen , Li-Chun Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/522 ; H01L27/092

Abstract:
An integrated circuit includes a first power rail, a conductive structure, a first active region of a first set of transistors and a second active region of a second set of transistors. The first power rail is on a back-side of a substrate, extends in a first direction, and is configured to supply a first supply voltage. The first active region extends in the first direction, and is on a first level of a front-side of the substrate opposite from the back-side. The second active region extends in the first direction, is on the first level of the front-side of the substrate, and is separated from the first active region in a second direction different from the first direction. The conductive structure is on the back-side of the substrate, extends in the first direction, and is electrically coupled to the first active region and the second active region.
Public/Granted literature
- US20230114558A1 INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING THE SAME Public/Granted day:2023-04-13
Information query
IPC分类: