Invention Grant
- Patent Title: Electromagnetic shielding structure for a semiconductor device and a method for manufacturing the same
-
Application No.: US18173840Application Date: 2023-02-24
-
Publication No.: US12080656B2Publication Date: 2024-09-03
- Inventor: Jen-Yuan Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- The original application number of the division: US17301327 2021.03.31
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/52
Abstract:
A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.
Public/Granted literature
- US20230207484A1 ELECTROMAGNETIC SHIELDING STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-06-29
Information query
IPC分类:
