Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17898177Application Date: 2022-08-29
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Publication No.: US12080680B2Publication Date: 2024-09-03
- Inventor: Makoto Mizukami , Tatsuya Hirakawa , Tomohiro Iguchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisba Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisba Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20052530 2020.03.24
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.
Public/Granted literature
- US20220415848A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-12-29
Information query
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