Invention Grant
- Patent Title: Photosensitive semiconductor device including heterojunction photodiode
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Application No.: US17984243Application Date: 2022-11-10
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Publication No.: US12080734B2Publication Date: 2024-09-03
- Inventor: Zhaoyao Zhan , Qianwei Ding , Xiaohong Jiang , Ching Hwa Tey
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2010503994.4 2020.06.05
- The original application number of the division: US16931400 2020.07.16
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.
Public/Granted literature
- US20230071411A1 PHOTOSENSITIVE SEMICONDUCTOR DEVICE INCLUDING HETEROJUNCTION PHOTODIODE Public/Granted day:2023-03-09
Information query
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