Invention Grant
- Patent Title: Semiconductor device with assistant layer and method for fabricating the same
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Application No.: US17864468Application Date: 2022-07-14
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Publication No.: US12080754B2Publication Date: 2024-09-03
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L49/02
Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a semiconductor device including a first substrate; a capacitor structure positioned on the first substrate and including an exposed portion; a contact structure deposited on the exposed portion; an assistant layer positioned between the contact structure and the exposed portion; and a bonding structure positioned on the contact structure. The assistant layer includes germanium or silicon germanium.
Public/Granted literature
- US20240021665A1 SEMICONDUCTOR DEVICE WITH ASSISTANT LAYER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2024-01-18
Information query
IPC分类:
