Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US18315317Application Date: 2023-05-10
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Publication No.: US12080804B2Publication Date: 2024-09-03
- Inventor: Hiroyuki Shimbo
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: Rimon P.C.
- Priority: JP 16034417 2016.02.25
- Main IPC: H01L29/786
- IPC: H01L29/786 ; B82Y10/00 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L27/118 ; H01L29/06 ; H01L29/423 ; H01L29/775
Abstract:
In a standard cell including nanowire FETs, pads connected to nanowires are arranged at a predetermined pitch in X direction along which the nanowires extend. A cell width of the standard cell is an integral multiplication of the pitch. In a case where the standard cell is arranged to constitute the layout of a semiconductor integrated circuit device, the pads are regularly arranged in the X direction.
Public/Granted literature
- US20230275160A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2023-08-31
Information query
IPC分类:
