Invention Grant
- Patent Title: Optical semiconductor device
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Application No.: US17665885Application Date: 2022-02-07
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Publication No.: US12080813B2Publication Date: 2024-09-03
- Inventor: Fumitaka Nishio , Masatsugu Takatsuka
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 21024461 2021.02.18
- Main IPC: H01L31/024
- IPC: H01L31/024 ; H01L25/16 ; H01L31/0203 ; H01L31/107

Abstract:
An optical semiconductor device includes a wiring board including a first surface and a second surface, a cover disposed to face the first surface, an optical semiconductor element disposed on the first surface, a plurality of electrodes disposed on the second surface, and a resist layer disposed on the second surface and located at least between the plurality of electrodes. A ventilation hole that penetrates the first surface and the second surface is formed in the wiring board. The second surface includes a disposition region in which the resist layer is disposed and a non-disposition region in which the resist layer is not disposed. The non-disposition region includes a first region in which the ventilation hole is disposed and a second region that reaches an edge of the second surface from the first region.
Public/Granted literature
- US20220262961A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2022-08-18
Information query
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