Invention Grant
- Patent Title: Vertical light-emitting diode
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Application No.: US17538021Application Date: 2021-11-30
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Publication No.: US12080828B2Publication Date: 2024-09-03
- Inventor: Joon Hee Lee
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: LaBatt, LLC
- Priority: KR 20190064076 2019.05.30
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L27/15 ; H01L33/10 ; H01L33/22 ; H01L33/32 ; H01L33/40 ; H01L33/62

Abstract:
A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.
Public/Granted literature
- US20220149241A1 VERTICAL LIGHT-EMITTING DIODE Public/Granted day:2022-05-12
Information query
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