Invention Grant
- Patent Title: High frequency impedance matching edge launch RF connector
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Application No.: US17565691Application Date: 2021-12-30
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Publication No.: US12080978B2Publication Date: 2024-09-03
- Inventor: Benjamin W. Carpenter , Ryan D. Dewitt , Michael R. Beylor
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Tewksbury
- Main IPC: H01R12/00
- IPC: H01R12/00 ; H01R24/50 ; H01R43/20 ; H01R103/00

Abstract:
An edge launch radio frequency (RF) signal connector includes ground contact tabs that have radially extending arms. The arms cover a gap between a substrate, such as a circuit board, and the connector to reduce the RF ground path between the RF reference ground and a signal pin supported by the connector. The arms extend radially inwardly from the protruding ground contact tabs toward a central support aperture that supports the signal pin. The arms and the ground contact tabs are formed integrally with the main connector body as one piece. The arms and the ground contact tabs may be planar in shape such that the arms and the ground contact tabs lie flush on the substrate when the connector is arranged over the edge of the substrate.
Public/Granted literature
- US20230216256A1 HIGH FREQUENCY IMPEDANCE MATCHING EDGE LAUNCH RF CONNECTOR Public/Granted day:2023-07-06
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