Invention Grant
- Patent Title: Doherty amplifier
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Application No.: US17622028Application Date: 2019-11-21
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Publication No.: US12081174B2Publication Date: 2024-09-03
- Inventor: Katsuya Kato
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/045643 2019.11.21
- International Announcement: WO2021/100176A 2021.05.27
- Date entered country: 2021-12-22
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H01L23/66 ; H01L25/07 ; H03F3/195 ; H01L23/00

Abstract:
A first transistor chip (3) includes a first drain pad (5). A second transistor chip (4) includes a second drain pad (6). A transmission line (9) and a first capacitor (C1) are formed on a resin substrate (1). A first bonding wire (7) connects the first drain pad (5) and one end of the transmission line (9). A second bonding wire (10) connects the second drain pad (6) and one end of the first capacitor (C1). An output terminal (OUT) is connected to the other end of the transmission line (9) and the other end of the first capacitor (C1). A capacitance value of the first capacitor (C1) is selected so as to cause resonance with inductance of the second bonding wire (10).
Public/Granted literature
- US20220278652A1 DOHERTY AMPLIFIER Public/Granted day:2022-09-01
Information query
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