Invention Grant
- Patent Title: Semiconductor structure and method for preparing seminconductor structure
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Application No.: US17444670Application Date: 2021-08-08
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Publication No.: US12082392B2Publication Date: 2024-09-03
- Inventor: Jingwen Lu , Bingyu Zhu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010876670.5 2020.08.27
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L23/528
Abstract:
A semiconductor structure includes a conductive structure. A method for preparing the conductive structure includes: forming a semiconductor conductive layer; forming a nitrile or isonitrile transition layer on the semiconductor conductive layer; and forming a metal conductive layer on the nitrile or isonitrile transition layer.
Public/Granted literature
- US20220068928A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SEMINCONDUCTOR STRUCTURE Public/Granted day:2022-03-03
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