A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers having channel-material strings therein. Walls are formed above insulating material that is directly above the channel-material strings. Void space is laterally-between immediately-adjacent of the walls and that comprises a longitudinal outline of individual digitlines to be formed. Spaced openings are in the insulating material directly below the void space. Relative to the walls, a conductive metal nitride is selectively deposited in the void space, in the spaced openings, and atop the insulating material laterally-between the walls and the spaced openings to form a lower portion of the individual digitlines laterally-between the immediately-adjacent walls. The conductive metal nitride that is in individual of the spaced openings is directly electrically coupled to individual of the channel-material strings. A conductive material is formed in the void space directly above and directly electrically coupled to the lower portion of the individual digitlines to form an upper portion thereof. Other embodiments, including structure independent of method, are disclosed.