Invention Grant
- Patent Title: Template, pattern forming method, and semiconductor device manufacturing method
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Application No.: US18172540Application Date: 2023-02-22
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Publication No.: US12085853B2Publication Date: 2024-09-10
- Inventor: Hirotaka Tsuda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 22100316 2022.06.22
- Main IPC: G03F7/00
- IPC: G03F7/00 ; B29C59/02

Abstract:
A template includes a first region having a first face on a side opposite to a main face and a first pattern including a convex-concave portion provided on the first face, and a second region, provided around the first region, having a second face on the side opposite to the main face, a second pattern including a protruding portion protruding from the second face, and an optical layer provided on the second face and the second pattern, wherein the second face is positioned farther to the main surface side than a bottommost face of the irregular portion.
Public/Granted literature
- US20230418155A1 TEMPLATE, PATTERN FORMING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2023-12-28
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