Invention Grant
- Patent Title: Resin, photoresist composition, and method of manufacturing semiconductor device
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Application No.: US17220705Application Date: 2021-04-01
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Publication No.: US12085855B2Publication Date: 2024-09-10
- Inventor: Siao-Shan Wang , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/004 ; G03F7/027 ; G03F7/038 ; G03F7/16 ; G03F7/20 ; G03F7/38 ; G03F7/40 ; C08L25/08 ; C08L33/10

Abstract:
A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.
Public/Granted literature
- US20210341837A1 RESIN, PHOTORESIST COMPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-11-04
Information query
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