Invention Grant
- Patent Title: Adaptive control circuit of static random access memory
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Application No.: US17936559Application Date: 2022-09-29
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Publication No.: US12087355B2Publication Date: 2024-09-10
- Inventor: Dao-Ping Wang
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsinchu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C11/419

Abstract:
An adaptive control circuit of SRAM (Static Random Access Memory) includes a switch circuit, a forward diode-connected transistor, a backward diode-connected transistor, and a first delay circuit. The switch circuit is supplied by a supply voltage, and is coupled to a first node. The backward diode-connected transistor is coupled in parallel with the forward diode-connected transistor between the first node and a second node. The first delay circuit is coupled between the second node and a ground voltage.
Public/Granted literature
- US20230197144A1 ADAPTIVE CONTROL CIRCUIT OF STATIC RANDOM ACCESS MEMORY Public/Granted day:2023-06-22
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