Invention Grant
- Patent Title: Memory device and read operation during suspension of program operation thereof
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Application No.: US17891065Application Date: 2022-08-18
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Publication No.: US12087366B2Publication Date: 2024-09-10
- Inventor: Jialiang Deng
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/24 ; G11C16/26

Abstract:
In certain aspects, a memory device includes an array of memory cells, including a first memory cell and a second memory cell, and a peripheral circuit. The peripheral circuit includes a page buffer circuit and control logic. The control logic is configured to suspend a program operation on the first memory cell responsive to receiving a suspension command, control the page buffer circuit to store suspended program information associated with a suspension of the program operation, control the page buffer circuit to release a sensing storage unit and a cache storage unit of the page buffer circuit from being occupied by the suspension of the program operation through a storage of a piece of program information from the suspended program information in a memory controller, and initiate a read operation on the second memory cell using the sensing storage unit and the cache storage unit.
Public/Granted literature
- US20240062830A1 MEMORY DEVICE AND READ OPERATION DURING SUSPENSION OF PROGRAM OPERATION THEREOF Public/Granted day:2024-02-22
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