Invention Grant
- Patent Title: Circuit and method for on-chip leakage detection and compensation for memories
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Application No.: US17548096Application Date: 2021-12-10
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Publication No.: US12087368B2Publication Date: 2024-09-10
- Inventor: Arpit Vijayvergia , Vikas Rana
- Applicant: STMICROELECTRONICS INTERNATIONAL N.V.
- Applicant Address: CH Geneva
- Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee: STMICROELECTRONICS INTERNATIONAL N.V.
- Current Assignee Address: CH Geneva
- Agency: Seed IP Law Group LLP
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/04 ; G11C16/24

Abstract:
An integrated circuit includes a memory array and a memory read circuitry for reading data from the memory array. The memory read circuitry includes a leakage current compensation circuit. The leakage current compensation circuit senses the leakage current in a bitline of the memory array during a read operation and generates a leakage compensation current to offset the leakage current during the read operation.
Public/Granted literature
- US20220208279A1 CIRCUIT AND METHOD FOR ON-CHIP LEAKAGE DETECTION AND COMPENSATION FOR MEMORIES Public/Granted day:2022-06-30
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