Invention Grant
- Patent Title: Semiconductor processing tool and methods of operation
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Application No.: US18162274Application Date: 2023-01-31
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Publication No.: US12087563B2Publication Date: 2024-09-10
- Inventor: Yen-Liang Lin , Yu-Kang Huang , Yu-Chuan Tai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/18 ; C23C14/35 ; C23C14/54 ; H01J37/32 ; H01J37/34

Abstract:
The physical vapor deposition tool includes a magnet component, a single cathode, and a power circuit for biasing a pedestal that supports a semiconductor substrate. During a deposition operation that deposits an inert metal material, the physical vapor deposition tool may modulate an electromagnetic field emanating from the magnet component that includes spiral-shaped bands having different ranges of magnetic strength. The physical vapor deposition tool may have an increased throughput relative to a physical vapor deposition tool without the magnet component, the single cathode, and the power circuit. Additionally, or alternatively, the inert metal material may have a grain size that is greater relative to a grain size of an inert metal material deposited using the physical vapor deposition tool without the magnet component, the single cathode, and the power circuit.
Public/Granted literature
- US20240096609A1 SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION Public/Granted day:2024-03-21
Information query
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