In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.