Invention Grant
- Patent Title: Method of manufacturing wafer and method of manufacturing stacked device chip
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Application No.: US17652371Application Date: 2022-02-24
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Publication No.: US12087589B2Publication Date: 2024-09-10
- Inventor: Kazuma Sekiya
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: GREER BURNS & CRAIN, LTD.
- Priority: JP 21037483 2021.03.09
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/67 ; H01L21/683 ; H01L21/78
Abstract:
A method of manufacturing a wafer includes a wafer preparing step of preparing a wafer having semiconductor devices formed in a plurality of respective areas demarcated thereon by a plurality of intersecting streets, a removing step of removing from the wafer a defective device region including a semiconductor device determined as a defective product among the semiconductor devices formed on the wafer, an enlarging step of enlarging a removed region formed in the wafer by removing the defective device region from the wafer, and an inlaying step of inlaying a device chip including a non-defective semiconductor device that is functionally identical to the semiconductor device determined as the defective product, in the enlarged removed region.
Public/Granted literature
- US20220293424A1 METHOD OF MANUFACTURING WAFER AND METHOD OF MANUFACTURING STACKED DEVICE CHIP Public/Granted day:2022-09-15
Information query
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