Invention Grant
- Patent Title: Metal deposition and etch in high aspect-ratio features
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Application No.: US17689092Application Date: 2022-03-08
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Publication No.: US12087595B2Publication Date: 2024-09-10
- Inventor: Baiwei Wang , Rohan Puligoru Reddy , Xiaolin C. Chen , Zhenjiang Cui , Anchuan Wang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H10B41/27 ; H10B41/35 ; H10B43/27 ; H10B43/35
Abstract:
Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.
Public/Granted literature
- US20230290647A1 METAL DEPOSITION AND ETCH IN HIGH ASPECT-RATIO FEATURES Public/Granted day:2023-09-14
Information query
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