A semiconductor structure includes a first dielectric material layer, a first metal interconnect structure embedded within the first dielectric material layer and including a first metallic material portion including a first metal, a second dielectric material layer located over the first dielectric material layer, and a second metal interconnect structure embedded within the second dielectric material layer and including an integrated line-and-via structure that includes a second metallic material portion including a second metal. A metal-semiconductor alloy portion including a first metal-semiconductor alloy of the first metal and a semiconductor material is located underneath the second metallic material portion, and contacts a top surface of the first metal interconnect structure.