A through substrate via structure and a manufacturing method thereof, and a redistribution layer structure and a manufacturing method thereof are provided. The through substrate via structure includes a columnar conductive layer and a nanotwinned metal film disposed at least around the conductive layer. In a cross-section of the through substrate via structure, relative to a total area of the conductive layer and the nanotwinned metal film, an area ratio of the nanotwinned metal film is 50% or less by area.