Invention Grant
- Patent Title: Semiconductor device with reduced thermal resistance for improved heat dissipation
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Application No.: US17653692Application Date: 2022-03-07
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Publication No.: US12087672B2Publication Date: 2024-09-10
- Inventor: Daisuke Koike
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP 21154481 2021.09.22
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
This semiconductor device includes: a bed including a first upper surface having a plurality of first grooves and a first lower surface; a first bonding material provided on the first upper surface and in contact with the first grooves; a semiconductor chip including a second upper surface having a first electrode and a second electrode, and a second lower surface, the semiconductor chip being provided on the first bonding material and having the second lower surface connected to the first bonding material; a second bonding material provided on the first electrode and connected to the first electrode; and a first connector having a first end having a plurality of second grooves and connected to the second bonding material, and a second end.
Public/Granted literature
- US20230089603A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-03-23
Information query
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