Invention Grant
- Patent Title: Guard ring and manufacturing method thereof
-
Application No.: US17446235Application Date: 2021-08-27
-
Publication No.: US12087709B2Publication Date: 2024-09-10
- Inventor: Jen-Yuan Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/768 ; H01L23/48

Abstract:
Some implementations described herein provide an electronic device. The electronic device includes a first conductive structure that extends through a dielectric structure of the electronic device and into a substrate of the electronic device. The electronic device includes a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure. The electronic device includes a second conductive structure that extends along a second vertical portion of the first conductive structure, where the second conductive structure includes a conductive structure side surface, which is nearest to a side surface of the first conductive structure, that is a distance from the side surface of the first conductive structure, and where the distance is greater than or equal to approximately 5% of a width of the first conductive structure.
Public/Granted literature
- US20220344284A1 GUARD RING AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-10-27
Information query
IPC分类: